A FORTIFIED FOURTEEN-TRANSISTOR STATIC MEMORY CELL WITH ENHANCED RESISTANCE TO RADIATION-INDUCED PERTURBATIONS

Feb 28, 2026 by G. Kumar, C. Manoj, Bezawada Siva Ganesh, Veeranki Sasidhar, Nerusu Rajesh, Babu (International Journal of Data Science and IoT Management System)

DOI 10.64751/ijdim.2026.v5.n1.pp96-101

We reworked a 14T RHBD SRAM into RSP-14T to boost write efficiency and harden the cell against SEUs and DNUs without trading off speed or power; simulations in Tanner show measurable gains in both speed and radiation tolerance. If you care about making on-chip memory survive real orbital environments while keeping fast writes, this one’s worth a look.

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