Design and technology solutions for developing one-time programmable memory

Jan 1, 2026 by T. A. Shobolova, C.V. Obolensky, E.L. Shobolov, S.N. Kuznetsov, S.D. Serov (Achievements of Modern Radioelectronics)

DOI 10.18127/j20700784-202601-07

Built a CMOS-compatible one-time programmable cell using a bottom-of-contact flat capacitor with silicon oxide dielectric that irreversibly breaks down at modest 3.5–4.5 V, letting you add OTP bits without exotic materials or process steps. We fabricated and tested self-aligned samples in micron/submicron flows, so you can drop this into standard fabs for low-cost, reliable OTP storage.

source S2, crossref