Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices

Jan 30, 2026 by Seyed Parsa Hemmasi, M. H. Moaiyeri, Nima Eslami, B. Ebrahimi (Scientific Reports)

DOI 10.1038/s41598-025-34924-1

We built a dual-directional CIM nvSRAM that does row- and column-wise compute in the same cycle with Simultaneous Compute and Write, and slipped a single I-MTJ into each cell so the array instantly retains and restores state across power glitches. It’s basically instant-on/off edge AI: much lower latency and energy for matrix–vector ops and backup, so your sensor node or always-on micro can survive brownouts without the usual CIM overhead.

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