Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory

Feb 23, 2026 by Sang Won Chung, S. Yoon, J. Jeong (Communications Engineer)

DOI 10.1038/s44172-026-00616-5

We built a persuasive narrative for oxide semiconductor gain-cell DRAM and why it matters: showing how ultra-low leakage wide-bandgap oxides and novel GAA/CAA stacked device geometries can unlock massively denser, lower-power on‑chip memory and reshape AI/accelerator architectures. If you care about scaling past conventional CMOS memory limits, this review maps the materials, integration strategies, and open reliability challenges you need to know to push the next generation of on‑chip memory.

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