Heterogeneously integrated IGZTO-CMOS neuromorphic CIM achieving 34.8 TOPS/W and 87.7-fJ write energy

Mar 2, 2026 by zhaolong He, Kaichang Chen, Hanfeng Wang, Yaolei Guo, Yue Cheng, Chenhao Tang, Yunlong Li, Rui Zhang, Junkang Li, Yitao Ma (Japanese Journal of Applied Physics)

DOI 10.35848/1347-4065/ae4be5

We heterogeneously integrated multi-level IGZTO thin-film transistors on a 55 nm CMOS backend to build a 32×32 CIM neuromorphic macro that runs current-mode 4-bit signed MACs and I&F neurons with tiny leakage and BEOL compatibility. The chip hits 87.7 fJ write energy and 34.8 TOPS/W while retaining 50 ms retention, showing IGZTO–CMOS co‑integration as a practical route to compact, ultra‑low‑power mixed‑signal edge AI accelerators.

source S2, crossref